Samwin · FETs & Power MOSFETs · MPN SWP070R08E7T
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| Gate Charge(Qg) | 109nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 178.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 263pF |
| RDS(on) | 7.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.17nF |
80V 100A 178.6W Through Hole TO-220