Samwin · FETs & Power MOSFETs · MPN SWP060R65E7T
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| Gate Charge(Qg) | 94nC@10V |
|---|---|
| Drain to Source Voltage | 65V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 171W |
| Reverse Transfer Capacitance (Crss@Vds) | 312pF |
| RDS(on) | 5.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.623nF |
65V 110A 171W Through Hole TO-220