Samwin SWP060R65E7T

Samwin · FETs & Power MOSFETs · MPN SWP060R65E7T

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Specifications

Gate Charge(Qg)94nC@10V
Drain to Source Voltage65V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation171W
Reverse Transfer Capacitance (Crss@Vds)312pF
RDS(on)5.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.623nF

Technical details

65V 110A 171W Through Hole TO-220

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