Samwin SWP055R68E7T

Samwin · FETs & Power MOSFETs · MPN SWP055R68E7T

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Specifications

Gate Charge(Qg)94nC@10V
Drain to Source Voltage68V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation171W
Reverse Transfer Capacitance (Crss@Vds)312pF
RDS(on)5.6mΩ@10V
Input Capacitance(Ciss)3.623nF

Technical details

68V 110A 2V 171W 5.6mΩ@10V TO-220 Single FETs, MOSFETs RoHS

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