Samwin · FETs & Power MOSFETs · MPN SWP050R68E8T
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| Gate Charge(Qg) | 129nC@10V |
|---|---|
| Drain to Source Voltage | 68V |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 195.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 351pF |
| RDS(on) | 5.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.259nF |
68V 130A 195.3W Through Hole TO-220