Samwin · FETs & Power MOSFETs · MPN SWP046R68E8T
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| Gate Charge(Qg) | 145nC@10V |
|---|---|
| Drain to Source Voltage | 68V |
| Current - Continuous Drain(Id) | 145A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 195.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 386pF |
| RDS(on) | 4.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.554nF |
68V 145A 195.3W Through Hole TO-220