Samwin · FETs & Power MOSFETs · MPN SWN4N80D
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 22W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF |
| RDS(on) | 3.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 679pF |
800V 4A 22W Through Hole TO-251N