Samwin · FETs & Power MOSFETs · MPN SWN3N80D
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| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.6pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 583pF |
800V 3A 20W Through Hole TO-251N