Samwin SWI7N60D

Samwin · FETs & Power MOSFETs · MPN SWI7N60D

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)1.05Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF

Technical details

600V 7A 125W Through Hole TO-251

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