Samwin SWI069R10VS

Samwin · FETs & Power MOSFETs · MPN SWI069R10VS

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation158W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)7.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.041nF

Technical details

100V 70A 158W Through Hole TO-251

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