Samwin SWF8N65DB

Samwin · FETs & Power MOSFETs · MPN SWF8N65DB

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage650V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation181W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.77nF

Technical details

650V 8A 181W Through Hole TO-220F

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