Samwin SWF2N65DB

Samwin · FETs & Power MOSFETs · MPN SWF2N65DB

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Specifications

Gate Charge(Qg)11nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation16.4W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)3.9Ω@10V
Number1 N-channel
Input Capacitance(Ciss)339pF

Technical details

650V 2A 16.4W Through Hole TO-220F

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