Samwin · FETs & Power MOSFETs · MPN SWF2N60DB
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| Gate Charge(Qg) | 10nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 20.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 3.9Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 310pF |
600V 2A 20.2W Through Hole TO-220F