Samwin SWD9N50D

Samwin · FETs & Power MOSFETs · MPN SWD9N50D

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Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation181W
Reverse Transfer Capacitance (Crss@Vds)22.4pF
RDS(on)680mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.479nF

Technical details

500V 9A 181W Surface Mount TO-252

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