Samwin SWD7N65J

Samwin · FETs & Power MOSFETs · MPN SWD7N65J

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation113.6W
Reverse Transfer Capacitance (Crss@Vds)1.1pF
RDS(on)660mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)475pF

Technical details

650V 7A 113.6W Surface Mount TO-252

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