Samwin · FETs & Power MOSFETs · MPN SWD6N65D
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| Gate Charge(Qg) | 22nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 236W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 1.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 810pF |
650V 6A 236W Surface Mount TO-252