Samwin · FETs & Power MOSFETs · MPN SWD1N60DC
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| Gate Charge(Qg) | 7nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 198pF |
600V 1A 125W Surface Mount TO-252