Samwin SWD088R08E8T

Samwin · FETs & Power MOSFETs · MPN SWD088R08E8T

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Specifications

Gate Charge(Qg)86nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)199pF
RDS(on)9.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.001nF

Technical details

80V 80A 125W Surface Mount TO-252

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