Samwin · FETs & Power MOSFETs · MPN SWD086R68E7T
No reviews yet — be the first to review Samwin SWD086R68E7T.
| Gate Charge(Qg) | 66nC@10V |
|---|---|
| Drain to Source Voltage | 68V |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 89.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 183pF |
| RDS(on) | 9.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.972nF |
68V 70A 89.3W Surface Mount TO-252