Samwin SWD085R68E7T

Samwin · FETs & Power MOSFETs · MPN SWD085R68E7T

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Specifications

Gate Charge(Qg)47nC@10V
Drain to Source Voltage68V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation92.6W
Reverse Transfer Capacitance (Crss@Vds)129pF
RDS(on)10.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.145nF

Technical details

68V 70A 92.6W Surface Mount TO-252

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