Samwin · FETs & Power MOSFETs · MPN SWD062R08E8T
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| Gate Charge(Qg) | 141nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 142W |
| Reverse Transfer Capacitance (Crss@Vds) | 314pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.755nF |
80V 110A 142W Surface Mount TO-252