Samwin · FETs & Power MOSFETs · MPN SWD046R68E8T
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| Gate Charge(Qg) | 146nC@10V |
|---|---|
| Drain to Source Voltage | 68V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 176W |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.831nF |
68V 120A 176W Surface Mount TO-252