Samwin SWB7N65DW

Samwin · FETs & Power MOSFETs · MPN SWB7N65DW

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation179W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)960mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.4nF

Technical details

650V 7A 179W Surface Mount TO-263

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