Samwin · FETs & Power MOSFETs · MPN SWB086R68E7T
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| Gate Charge(Qg) | 64nC@10V |
|---|---|
| Drain to Source Voltage | 68V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 116W |
| Reverse Transfer Capacitance (Crss@Vds) | 173pF |
| RDS(on) | 9.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.039nF |
68V 75A 116W Surface Mount TO-263