Samwin · FETs & Power MOSFETs · MPN SWB076R68E7T
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 68V |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 138.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 7.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.467nF |
68V 85A 138.9W Surface Mount TO-263