Samwin · FETs & Power MOSFETs · MPN SWB056R68E7T
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| Gate Charge(Qg) | 107nC@10V |
|---|---|
| Drain to Source Voltage | 68V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 266W |
| Reverse Transfer Capacitance (Crss@Vds) | 317pF |
| RDS(on) | 5.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.676nF |
68V 120A 266W Surface Mount TO-263