Samwin SWB050R95E8S

Samwin · FETs & Power MOSFETs · MPN SWB050R95E8S

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)535pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation205W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)5.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.415nF
TypeN-Channel

Technical details

100V 130A 205W Surface Mount TO-263

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