ROHM VT6M1T2CR

ROHM · FETs & Power MOSFETs · MPN VT6M1T2CR

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Specifications

Current - Continuous Drain(Id)100mA
RDS(on)2.5Ω@4.5V;2.5Ω@-4.5V
Pd - Power Dissipation150mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)1.7pF;1.5pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)7.1pF;15pF
Output Capacitance(Coss)3.3pF;4pF

Technical details

N-Channel+P-Channel 20V 100mA 150mW Surface Mount SMD-6P

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