ROHM · FETs & Power MOSFETs · MPN VT6M1T2CR
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| Current - Continuous Drain(Id) | 100mA |
|---|---|
| RDS(on) | 2.5Ω@4.5V;2.5Ω@-4.5V |
| Pd - Power Dissipation | 150mW |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.7pF;1.5pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 7.1pF;15pF |
| Output Capacitance(Coss) | 3.3pF;4pF |
N-Channel+P-Channel 20V 100mA 150mW Surface Mount SMD-6P