ROHM · FETs & Power MOSFETs · MPN UT6MC5TCR
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| Current - Continuous Drain(Id) | 3.5A |
|---|---|
| RDS(on) | 280mΩ@10V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF;13pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 135pF;265pF |
| Gate Charge(Qg) | 3.1nC@10V;6.3nC@10V |
| Output Capacitance(Coss) | 38pF;18pF |
3.5A 280mΩ@10V 2W 2.5V 1 N-Channel + 1 P-Channel DFN2020-8D FET, MOSFET Arrays RoHS