ROHM US6T8TR

ROHM · Transistors (BJTs) · MPN US6T8TR

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation400mW
Collector - Emitter Voltage VCEO12V
DC Current Gain270
Transition frequency(fT)400MHz
typePNP
Vce Saturation(VCE(sat))200mV
Current - Collector(Ic)1.5A
Operating Temperature-

Technical details

400mW 12V 270 PNP 1.5A TUMT-6 Bipolar Transistor Arrays RoHS

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