ROHM US6M2TR

ROHM · FETs & Power MOSFETs · MPN US6M2TR

No reviews yet — be the first to review ROHM US6M2TR.

Specifications

Configuration-
Current - Continuous Drain(Id)1.5A
RDS(on)800mΩ@2.5V
Pd - Power Dissipation1W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)20pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)150pF
Gate Charge(Qg)2.1nC@4.5V
Operating Temperature-

Technical details

1.5A 800mΩ@2.5V 1W 2V 1 N-Channel + 1 P-Channel TUMT-6 FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs