ROHM · FETs & Power MOSFETs · MPN US6M2GTR
No reviews yet — be the first to review ROHM US6M2GTR.
| Current - Continuous Drain(Id) | 1.5A;1A |
|---|---|
| RDS(on) | 240mΩ@4.5V;390mΩ@4.5V |
| Pd - Power Dissipation | 1W |
| Gate Threshold Voltage (Vgs(th)) | 1.5V;2V |
| Drain to Source Voltage | 30V;20V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 80pF;150pF |
| Gate Charge(Qg) | 2.2nC@4.5V;2.1nC@4.5V |
| Operating Temperature | - |
1W 1 N-Channel + 1 P-Channel TUMT6 FET, MOSFET Arrays RoHS