ROHM · FETs & Power MOSFETs · MPN US6M1TR
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| Current - Continuous Drain(Id) | 1.4A;1A |
|---|---|
| RDS(on) | 240mΩ@10V |
| Pd - Power Dissipation | 1W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 30V;20V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 70pF |
| Gate Charge(Qg) | 2nC@5V |
| Operating Temperature | - |
240mΩ@10V 1W 2.5V 1 N-Channel + 1 P-Channel TUMT6 FET, MOSFET Arrays RoHS