ROHM US6M11TR

ROHM · FETs & Power MOSFETs · MPN US6M11TR

No reviews yet — be the first to review ROHM US6M11TR.

Specifications

Current - Continuous Drain(Id)1.5A
RDS(on)600mΩ
Pd - Power Dissipation1W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)15pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)1.8nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 20V 1.5A 1W Surface Mount TUMT-6

Related FETs & Power MOSFETs