ROHM UMH33NTN

ROHM · Transistors (BJTs) · MPN UMH33NTN

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)35MHz
Emitter-Base Voltage VEBO40V
DC Current Gain2700
Vce Saturation(VCE(sat))100mV
typeNPN
Input Resistor2.2kΩ
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Current - Collector(Ic)400mA
Collector - Emitter Voltage VCEO20V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 20V 400mA 150mW Surface Mount SOT-363

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