ROHM UMH2N-TN

ROHM · Transistors (BJTs) · MPN UMH2N-TN

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Specifications

Transition frequency(fT)250MHz
DC Current Gain68
typeNPN
Output Voltage(VO(on))100mV
Input Resistor47kΩ
Resistor Ratio1
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)500mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-40℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363

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