ROHM UMG8NTR

ROHM · Transistors (BJTs) · MPN UMG8NTR

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Specifications

Transition frequency(fT)250MHz
DC Current Gain80
typeNPN
Output Voltage(VO(on))300mV
Input Resistor4.7kΩ
Resistor Ratio10
Number2 NPN Pre-Biased (Emitter-Coupled)
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)1.3V
Voltage - Input(Max)(VI(off))500mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353-5

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