ROHM UMD6NTR

ROHM · Transistors (BJTs) · MPN UMD6NTR

No reviews yet — be the first to review ROHM UMD6NTR.

Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
typeNPN+PNP
Input Resistor6.11kΩ
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Pd - Power Dissipation300mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-363

Related Transistors (BJTs)