ROHM UM6J1NTN

ROHM · FETs & Power MOSFETs · MPN UM6J1NTN

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Specifications

Current - Continuous Drain(Id)200mA
RDS(on)1.4Ω@10V
Pd - Power Dissipation150mW
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number2 P-Channel
Input Capacitance(Ciss)30pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)4pF

Technical details

P-Channel 30V 200mA 150mW Surface Mount SOT-363

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