ROHM TT8U2TR

ROHM · FETs & Power MOSFETs · MPN TT8U2TR

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)6.7nC@4.5V
Current - Continuous Drain(Id)2.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))300mV
Pd - Power Dissipation1.25W
RDS(on)105mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)850pF

Technical details

20V 2.4A 300mV 1.25W 105mΩ@4.5V 1 P-Channel TSST-8 Single FETs, MOSFETs RoHS

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