ROHM TT8M3TR

ROHM · FETs & Power MOSFETs · MPN TT8M3TR

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)6.7nC@4.5V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)360mΩ@1.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)850pF
TypeN-Channel + P-Channel

Technical details

20V 2.5A 1V 1.25W 360mΩ@1.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel TSST-8 Single FETs, MOSFETs RoHS

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