ROHM TT8M1TR

ROHM · FETs & Power MOSFETs · MPN TT8M1TR

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Specifications

Current - Continuous Drain(Id)2.5A
Pd - Power Dissipation1.25W
RDS(on)280mΩ@1.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)90pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.27nF
Gate Charge(Qg)12nC@4.5V
Operating Temperature-
Output Capacitance(Coss)100pF

Technical details

N-Channel+P-Channel Array 20V 2.5A 1.25W TSST-8

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