ROHM TT8K11TCR

ROHM · FETs & Power MOSFETs · MPN TT8K11TCR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)-
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)109mΩ@4V
Number2 N-Channel
Input Capacitance(Ciss)140pF
TypeN-Channel

Technical details

30V 2.5V 1.25W 109mΩ@4V 2 N-Channel N-Channel TSST-8 Single FETs, MOSFETs RoHS

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