ROHM SP8M51HZGTB

ROHM · FETs & Power MOSFETs · MPN SP8M51HZGTB

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Specifications

Current - Continuous Drain(Id)3A;2.5A
Pd - Power Dissipation2W
RDS(on)170mΩ@10V;290mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage100V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)610pF;1.55nF
Gate Charge(Qg)8.5nC@5V;12.5nC@5V
Operating Temperature-

Technical details

N-Channel+P-Channel Array 100V 3A 2.5A 2W Surface Mount SOP-8

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