ROHM · FETs & Power MOSFETs · MPN SM6K2T110
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| Current - Continuous Drain(Id) | 200mA |
|---|---|
| RDS(on) | 4Ω@4V |
| Pd - Power Dissipation | 200mW |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 2.2nC@10V |
| Operating Temperature | - |
| Output Capacitance(Coss) | 8pF |
200mA 4Ω@4V 200mW 2.5V 2 N-Channel SC-74(SOT-457) FET, MOSFET Arrays RoHS