ROHM SH8MB5TB1

ROHM · FETs & Power MOSFETs · MPN SH8MB5TB1

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Specifications

Current - Continuous Drain(Id)8.5A
Pd - Power Dissipation2W
RDS(on)19.4mΩ@10V;16.8mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage40V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)530pF;2.87nF
Gate Charge(Qg)10.6nC@20V;51nC@20V
Operating Temperature-

Technical details

N-Channel+P-Channel Array 40V 8.5A 2W Surface Mount SOP-8

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