ROHM SH8MA4TB1

ROHM · FETs & Power MOSFETs · MPN SH8MA4TB1

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Specifications

Current - Continuous Drain(Id)9A;8.5A
RDS(on)16.5mΩ@10V;23mΩ@10V
Pd - Power Dissipation3W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V;30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)90pF;125pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)640pF;890pF
Gate Charge(Qg)15.5nC@10V;19.6nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)110pF;160pF

Technical details

N-Channel+P-Channel 30V 9A 3W Surface Mount SOP-8

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