ROHM · FETs & Power MOSFETs · MPN SH8M51GZETB
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| Current - Continuous Drain(Id) | 3A;2.5A |
|---|---|
| Pd - Power Dissipation | 1.4W |
| RDS(on) | 170mΩ@10V;290mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 100V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 610pF;1.55nF |
| Gate Charge(Qg) | 8.5nC@5V;12.5nC@5V |
| Operating Temperature | - |
1.4W 2.5V 1 N-Channel + 1 P-Channel SOP-8 FET, MOSFET Arrays RoHS