ROHM · FETs & Power MOSFETs · MPN SH8M4TB1
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| Gate Charge(Qg) | 15nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 9A;7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.19nF |
30V 2.5V 2W 18mΩ@10V 1 N-Channel + 1 P-Channel SOP-8 Single FETs, MOSFETs RoHS