ROHM SH8M31GZETB

ROHM · FETs & Power MOSFETs · MPN SH8M31GZETB

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Specifications

Current - Continuous Drain(Id)4.5A
Pd - Power Dissipation2W
RDS(on)65mΩ@10V;70mΩ@10V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)500pF;2.5nF
Gate Charge(Qg)7nC@5V;40nC@10V
Operating Temperature-

Technical details

4.5A 2W 3V 1 N-Channel + 1 P-Channel SOP-8 FET, MOSFET Arrays RoHS

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