ROHM SH8M14TB1

ROHM · FETs & Power MOSFETs · MPN SH8M14TB1

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Specifications

Current - Continuous Drain(Id)9A;7A
RDS(on)21mΩ@10V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)630pF
Gate Charge(Qg)8.5nC@5V
Operating Temperature-

Technical details

21mΩ@10V 2W 2.5V 1 N-Channel + 1 P-Channel SOP-8 FET, MOSFET Arrays RoHS

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